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Study of proton radiation effects among diamond and rectangular gate MOSFET layouts

  • Published:2017-01-13 Issue:1 Volume:4 Page:015901
  • ISSN:2053-1591
  • Container-title:Materials Research Express
  • language:
  • Short-container-title:Mater. Res. Express

Author:

Seixas L E,Finco S,Silveira M A G,Medina N H,Gimenez S P

Funder

Coordenacao de Aperf. de Pessoal de Nivel Superior (CAPES)

Fund. de Amparo Pesquisa do Estado de Sao Paulo (FAPESP)

Financiadora de Estudos e Projetos (FINEP)

Publisher

IOP Publishing

Subject

Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparing Rectangular and ELT MOSFET layouts under TID;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28

2. The First Generation of the Unconventional Layout Styles for MOSFETs;Differentiated Layout Styles for MOSFETs;2023

3. The Ionizing Radiations Effects in Electrical Parameters and Figures of Merit of Mosfets;Differentiated Layout Styles for MOSFETs;2023

4. Introduction;Differentiated Layout Styles for MOSFETs;2023

5. New Hybrid Generation of Layout Styles to Boost the Electrical, Energy, and Frequency Response Performances of Analog MOSFETs;IEEE Transactions on Electron Devices;2022-06
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