Optimization by simulation of the nature of the buffer, the gap profile of the absorber and the thickness of the various layers in CZTSSe solar cells
Author:
Publisher
IOP Publishing
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/2053-1591/aa95df/pdf
Reference57 articles.
1. The path towards a high-performance solution-processed kesterite solar cell
2. First principles calculations of point defect diffusion in CdS buffer layers: Implications for Cu(In,Ga)(Se,S)2 and Cu2ZnSn(Se,S)4-based thin-film photovoltaics
3. Optoeletronic investigation of Cu2ZnSn(S,Se)4 thin-films & Cu2ZnSn(S,Se)4/CdS interface with scanning probe microscopy
4. Fabrication of Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber films based on solid-phase synthesis and blade coating processes
5. On the Sn loss from thin films of the material system Cu–Zn–Sn–S in high vacuum
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3. Effects of defect density, minority carrier lifetime, doping density, and absorber-layer thickness in CIGS and CZTSSe thin-film solar cells;Journal of Photonics for Energy;2023-06-02
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