Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/7/077104/pdf
Reference20 articles.
1. Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
2. Zero-field spin splitting in an invertedIn0.53Ga0.47As/In0.52Al0.48Asheterostructure: Band nonparabolicity influence and the subband dependence
3. Spin Splitting in In 0.53 Ga 0.47 As/InP Heterostructures
4. Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure
5. Large Rashba Splitting in InAs Quantum Wells due to Electron Wave Function Penetration into the Barrier Layers
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1. Effects of external electric field and Al content on g factor of wurtzite AlGaN/GaN quantum wells;Acta Physica Sinica;2018
2. Spin Dynamics in Ferromagnet/10-nm-Thick N-Type GaAs Quantum Well Junctions;Chinese Physics Letters;2017-11
3. Rashba spin splitting in the Al0.6Ga0.4N/GaN/Al0.3Ga0.7N/Al0.6Ga0.4N quantum well;Acta Physica Sinica;2016
4. Wave vector dependent Rashba coefficient and nonlinear Rashba spin splitting in AlGaN/GaN quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2014-08
5. Dependence of spin–orbit parameters in AlGaN/GaN quantum wells on the ratio of height between the left and right barrier;Physica B: Condensed Matter;2013-11
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