Spin Splitting in In 0.53 Ga 0.47 As/InP Heterostructures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/6/074/pdf
Reference21 articles.
1. Electronic analog of the electro‐optic modulator
2. Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure
3. Tunable Spin-Splitting and Spin-Resolved Ballistic Transport in GaAs/AlGaAs Two-Dimensional Holes
4. Zero-field spin splitting in an invertedIn0.53Ga0.47As/In0.52Al0.48Asheterostructure: Band nonparabolicity influence and the subband dependence
5. Oscillatory effects and the magnetic susceptibility of carriers in inversion layers
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1. Rashba spin splitting and cyclotron resonance in strained InGaAs/InP heterostructures with a two-dimensional electron gas;Semiconductors;2013-11
2. Dependence of Spin-orbit Parameters in Al x Ga 1− x N/GaN Quantum Wells on the Al Composition of the Barrier;Communications in Theoretical Physics;2013-07
3. A New Method to Calculate the Rashba Spin Splitting in III-Nitride Heterostructures;Chinese Physics Letters;2012-12
4. Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells;Chinese Physics Letters;2009-07
5. Anisotropic Spin Splitting in Step Quantum Wells;Chinese Physics Letters;2009-02-23
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