Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment-Reference-Cited by-同舟云学术

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Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Published:2010-08 Issue:8 Volume:27 Page:087301
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Xian-Gao Zhang,Kun-Ji Chen,Zhong-Hui Fang,Xin-Ye Qian,Guang-Yuan Liu,Xiao-Fan Jiang,Zhong-Yuan Ma,Jun Xu,Xin-Fan Huang,Jian-Xin Ji,Fei He,Kuang-Bao Song,Jun Zhang,Hui Wan,Rong-Hua Wang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/27/8/087301/pdf

Reference15 articles.

1. Nanocrystal nonvolatile memory devices

2. A silicon nanocrystals based memory

3. Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure

4. Nonvolatile Memory Characteristics with Embedded High Density Ruthenium Nanocrystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices*;Chinese Physics B;2016-08-02

2. Superior endurance performance of nonvolatile memory devices based on discrete storage in surface-nitrided Si nanocrystals;Journal of Applied Physics;2016-01-28

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