Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/32/4/047302/pdf
Reference17 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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3. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
4. Circuits using uniform TFTs based on amorphous In-Ga-Zn-O
5. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
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1. High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack;Chinese Physics B;2023-01-01
2. Recent progress of oxide-TFT-based inverter technology;Journal of Information Display;2021-09-23
3. Dynamic Simulation of a-IGZO TFT Circuits Using the Analytical Full Capacitance Model (AFCM);IEEE Journal of the Electron Devices Society;2021
4. Research Progress on Flexible Oxide-Based Thin Film Transistors;Applied Sciences;2019-02-22
5. Flexible InGaZnO TFTs With ${f}$ $_{\textsf{max}}$ Above 300 MHz;IEEE Electron Device Letters;2018-09
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