Electronic Structure of the Weak Topological Insulator Candidate Zintl Ba3Cd2Sb4

Abstract

One of the greatest triumph of condensed matter physics in the past ten years is the classification of materials by the principle of topology. The existence of topological protected dissipationless surface state makes topological insulators great potential for applications and hotly studied. However, compared with the prosperity of strong topological insulators, theoretical predicted candidate materials and experimental confirmation of weak topological insulators (WTIs) are both extremely rare. By combining systematic first-principles calculation and angle-resolved photoemission spectroscopy measurements, we have studied the electronic structure of the dark surface of the WTI candidate Zintl Ba3Cd2Sb4 and another related material Ba3Cd2As4. The existence of two Dirac surface states on specific side surfaces predicted by theoretical calculations and the observed two band inversions in the Brillouin zone give strong evidence to prove that the Ba3Cd2Sb4 is a WTI. The spectroscopic characterization of this Zintl Ba3Cd2N4 (N = As and Sb) family materials will facilitate applications of their novel topological properties.