Polarization-Induced Charges in Modulation-Doped AlxGa1-xN/GaN Heterostructures Through Capacitance-Voltage Profiling
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
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2. AlGaN/GaN high-electron-mobility transistors with transparent gates by Al-doped ZnO;Chinese Physics B;2013-06
3. Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics;Journal of Applied Physics;2009-07
4. Measurement of spontaneous polarization charge in C-face 3C-SiC/6H-SiC heterostructure with two-dimensional electron gas by capacitance-voltage method;Journal of Applied Physics;2009-05-15
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