Influence of AlGaN/GaN heterojunction parameters on its capacitance-voltage characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159014
Reference12 articles.
1. Frequency dispersion in capacitance-voltage characteristics of AlGaN∕GaN heterostructures
2. Polarization Charge Densities at p‐GaN/n‐AlGaN Heterojunctions Evaluated by Capacitance–Voltage Characteristics
3. Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors
4. Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors
5. Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors
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