Effects of LSMO Buffer Layer on Crystalline Orientation and Ferroelectric Properties of Bi 2.9 Pr 0.9 Ti 3 O 12 Thin Films Prepared by Radio-Frequency Magnetron Sputtering-Reference-Cited by-同舟云学术

Effects of LSMO Buffer Layer on Crystalline Orientation and Ferroelectric Properties of Bi 2.9 Pr 0.9 Ti 3 O 12 Thin Films Prepared by Radio-Frequency Magnetron Sputtering

Published:2008-10-30 Issue:11 Volume:25 Page:4131-4134
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Yun-Yi Wu,Duan-Ming Zhang,Jun Yu,Chao-Dan Zheng,Yun-Bo Wang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/25/11/080/pdf

Reference15 articles.

1. Lanthanum-substituted bismuth titanate for use in non-volatile memories

2. Effect of La doping on structural and electrical properties of ferroelectric Bi4−xLaxTi3O12 thin films prepared by chemical solution deposition

3. Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Films of Uniform a -Axis Orientation on Silicon Substrates

4. Effect of Annealing Temperature on Electrical Properties of Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Capacitors

5. Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films

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