Effect of Annealing Temperature on Electrical Properties of Ferroelectric Bi 3.25 La 0.75 Ti 3 O 12 Capacitors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. Layered Perovskites with Giant Spontaneous Polarizations for Nonvolatile Memories
2. Ni–Al diffusion barrier layer for integrating ferroelectric capacitors on Si
3. Large ferroelectric response in Bi4−xNdxTi3O12 films prepared by sol–gel process
4. Dielectric and ferroelectric properties of c-axis oriented strontium bismuth tantalate thin films applied transverse electric fields
5. Low-temperature integration of lead-based ferroelectric capacitors on Si with diffusion barrier layer
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sol–gel synthesis and electrical characterization of Bi3.25La0.75Ti3O12 thin films;Materials Research Bulletin;2012-11
2. Ferroelectric Properties of Bi 3.25 La 0.75 Ti 3 O 12 Thin Films Crystallized in Different N 2 /O 2 Ambients;Chinese Physics Letters;2009-03-31
3. Effect of Pyrolysis Atmosphere on Ferroelectric Properties of Bi 3.25 La 0.75 Ti 3 O 12 Films Prepared by Sol-Gel Method;Chinese Physics Letters;2009-02-23
4. Effects of LSMO Buffer Layer on Crystalline Orientation and Ferroelectric Properties of Bi 2.9 Pr 0.9 Ti 3 O 12 Thin Films Prepared by Radio-Frequency Magnetron Sputtering;Chinese Physics Letters;2008-10-30
5. Etch Damage Evaluation in Integrated Ferroelectric Capacitor Side Wall by Piezoresponse Force Microscopy;Chinese Physics Letters;2008-09
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