Band Structure and Optical Gain of InGaAs/GaAsBi Type-II Quantum Wells Modeled by the k · p Model
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/5/057801/pdf
Reference29 articles.
1. Molecular beam epitaxy growth of GaAs1−xBix
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3. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy
4. Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy
5. Giant Spin-Orbit Bowing inGaAs1−xBix
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