High-Temperature Characteristics of GaInNAs/GaAs Single-Quantum-Well Lasers Grown by Plasma-Assisted Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Dynamics of Output Spectra within a Single Laser Pulse from a Line-Narrowed Excimer Laser
3. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
4. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
5. Room-temperature pulsed operation of strained GaInNAs/GaAs double quantum well laser diode grown by metal organic chemical vapour deposition
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1. Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors;Materials Science-Poland;2017-12-20
2. Effect of SiO 2 Encapsulation on the Nitrogen Reorganization in a GaNAs/GaAs Single Quantum Well;Chinese Physics Letters;2004-02-19
3. Improvement of 1.3- m GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE;Chinese Physics Letters;2004-01
4. Temperature-Dependent Photoluminescence of ZnTe Films Grown on Si Substrates;Chinese Physics Letters;2003-11
5. GaInNAs/GaAs Multiple-Quantum Well Resonant-Cavity-Enhanced Photodetectors at 1.3 µm;Chinese Physics Letters;2001-08-16
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