Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template-Reference-Cited by-同舟云学术

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Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

Published:2012-09 Issue:9 Volume:29 Page:098502
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Yu Zhi-Guo,Chen Peng,Yang Guo-Feng,Liu Bin,Xie Zi-Li,Xiu Xiang-Qian,Wu Zhen-Long,Xu Feng,Xu Zhou,Hua Xue-Mei,Han Ping,Shi Yi,Zhang Rong,Zheng You-Dou

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/29/9/098502/pdf

Reference17 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates

3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

4. Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes

5. Light Extraction Enhancement of GaN LED with a Two-Dimensional Photonic Crystal Slab

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band Edge Emission Improvement by Energy Transfer in Hybrid III-Nitride/Organic Semiconductor Nanostructure;Chinese Physics Letters;2016-10

2. Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode;Chinese Physics B;2015-12

3. Using nanoimprint lithography to improve the light extraction efficiency and color rendering of dichromatic white light-emitting diodes;Nanoscale;2015

4. An Improvement on the Junction Temperature Measurement of Light-Emitting Diodes by using the Peak Shift Method Compared with the Forward Voltage Method;Chinese Physics Letters;2012-12

5. Growth and Characterization of an a-Plane In x Ga 1− x N on a r-Plane Sapphire;Chinese Physics Letters;2012-11

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