Germanium Nitride as a Buffer Layer for Phase Change Memory-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Germanium Nitride as a Buffer Layer for Phase Change Memory

Published:2012-10 Issue:10 Volume:29 Page:107201
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Zhang Xu,Liu Bo,Peng Cheng,Rao Feng,Zhou Xi-Lin,Song San-Nian,Wang Liang-Yong,Cheng Yan,Wu Liang-Cai,Yao Dong-Ning,Song Zhi-Tang,Feng Song-Lin

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/29/10/107201/pdf

Reference18 articles.

1. Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer

2. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm)

3. Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer

4. An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*;Chinese Physics B;2021-05-01

2. Thermally induced irreversibility in the conductivity of germanium nitride and oxynitride films;Materials Science in Semiconductor Processing;2018-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3