Room-Temperature Processed Amorphous ZnRhCuO Thin Films with p-Type Transistor and Gas-Sensor Behaviors

Abstract

We examine an amorphous oxide semiconductor (AOS) of ZnRhCuO. The a-ZnRhCuO films are deposited at room temperature, having a high amorphous quality with smooth surface, uniform thickness and evenly distributed elements, as well as a high visible transmittance above 87% with a wide bandgap of 3.12 eV. Using a-ZnRhCuO films as active layers, thin-film transistors (TFTs) and gas sensors are fabricated. The TFT behaviors demonstrate the p-type nature of a-ZnRhCuO channel, with an on-to-off current ratio of ∼ 1 × 103 and field-effect mobility of 0.079 cm2V–1s–1. The behaviors of gas sensors also prove that the a-ZnRhCuO films are of p-type conductivity. Our achievements relating to p-type a-ZnRhCuO films at room temperature with TFT devices may pave the way to practical applications of AOSs in transparent flexible electronics.