Hot-Carrier Stress Effects on GIDL and SILC in 90nm LDD-MOSFET with Ultra-Thin Gate Oxide
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/1/017304/pdf
Reference16 articles.
1. Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET
2. Leakage current degradation in n-MOSFETs due to hot-electron stress
3. Hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs
4. Gate-induced drain leakage current in MOS devices
5. Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect
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1. Impact of Hot Carrier Degradation on GIDL Current in 45nm SOI-NFETs;2019 IEEE International Integrated Reliability Workshop (IIRW);2019-10
2. Anomalous Channel Length Dependence of Hot-Carrier-Induced Saturation Drain Current Degradation in n-Type MOSFETs;Chinese Physics Letters;2015-08
3. Asymmetric Underlap in Scaled Floating Body Cell Memories;Chinese Physics Letters;2013-06
4. Gate leakage current of NMOSFET with ultra-thin gate oxide;Journal of Central South University;2012-11
5. GIDL current degradation in LDD nMOSFET under hot hole stress;Journal of Semiconductors;2011-11
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