Gate-induced drain leakage current in MOS devices-Reference-Cited by-同舟云学术

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Gate-induced drain leakage current in MOS devices

Published:1993 Issue:10 Volume:40 Page:1888-1890
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Nathan V.,Das N.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/6849/00277353.pdf?arnumber=277353

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Origin of Off‐State Current in Multilayered MoTe 2 Field‐Effect Transistors: Gate‐Induced Drain Leakage and Poole–Frenkel Conduction;physica status solidi (RRL) – Rapid Research Letters;2020-04-30

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