Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/9/098502/pdf
Reference18 articles.
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1. A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models;IEEE Transactions on Nuclear Science;2020-11
2. Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell;Acta Physica Sinica;2019
3. Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer;IEICE Electronics Express;2019
4. Influence of characteristics’ measurement sequence on total ionizing dose effect in PDSOI nMOSFET;Chinese Physics B;2018-12
5. Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs;Chinese Physics Letters;2017-11
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