Characterization of Obtuse Triangular Defects on 4H-SiC 4° off-Axis Epitaxial Wafers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/9/096105/pdf
Reference14 articles.
1. Trends in power semiconductor devices
2. Progress in silicon carbide semiconductor electronics technology
3. Improvement of Surface Roughness for 4H-SiC Epilayers Grown on 4° Off-Axis Substrates
4. Dislocation conversion in 4H silicon carbide epitaxy
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1. Multiple-Layer Triangular Defects in 4H-SiC Homoepitaxial Films Grown by Chemical Vapor Deposition;Crystals;2023-07-04
2. Effect of C/Si ratio on growth of 4H-SiC epitaxial layers on on-axis and 4° off-axis substrates;Journal of Crystal Growth;2020-02
3. Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*;Chinese Physics B;2019-06-01
4. Low Defect Thick Homoepitaxial Layers Grown on 4H-SiC Wafers for 6500 V JBS Devices;Materials Science Forum;2019-05
5. Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers;Journal of Crystal Growth;2019-01
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