Detection Wavelength of Strained In x Ga 1− x As/GaAs Very-Long-Wavelength Quantum Well Infrared Photodetectors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/5/077/pdf
Reference16 articles.
1. 19 μm cutoff long‐wavelength GaAs/AlxGa1−xAs quantum‐well infrared photodetectors
2. Quantum‐well infrared photodetectors
3. Comparison of the performance of quantum well and conventional bulk infrared photodetectors
4. Properties of InxGa1−xAs‐GaAs strained‐layer quantum‐well‐heterostructure injection lasers
5. A voltage‐tunable multicolor triple‐coupled InGaAs/GaAs/AlGaAs quantum‐well infrared photodetector for 8–12 μm detection
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1. Delamination study of InSb infrared focal plane arrays using a cohesive zone model;Acta Physica Sinica;2014
2. Deformation modeling of InSb IRFPAs under liquid nitrogen shock;Acta Physica Sinica;2014
3. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection;Nanoscale Research Letters;2013-07-03
4. Optical Switching of a Quantum Cascade Laser in Continuous Wave Operation;Chinese Physics Letters;2010-01
5. Analysis and comparison of n-AlxGa1−xAs/GaAs QWIPs with different device structures and optical coupling;Infrared Physics & Technology;2009-11
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