Ab Initio Calculation of Vacancies and Interstitials in NiSi 2
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference25 articles.
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1. Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation;Chinese Physics Letters;2017-07
2. Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates;Chinese Physics Letters;2017-06
3. Gruneisen parameter and thermal expansion coefficients of NiSi2from first-principles;Journal of Physics D: Applied Physics;2014-06-19
4. Ground state and phonon spectrum of NiSi2;Philosophical Magazine;2011-01-21
5. Calculation of Elastic Constants of Ag/Pd Superlattice Thin Films by Molecular Dynamics with Many-Body Potentials;Chinese Physics Letters;2006-10-26
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