Effect of Magnetic Field on a p-Type δ-Doped GaAs Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/27/7/077302/pdf
Reference44 articles.
1. The delta-doped field-effect transistor (δFET)
2. Fundamental studies and device application of ?-doping in GaAs Layers and in AlxGa1?xAs/GaAs heterostructures
3. Raman scattering from electronic excitations in periodically δ-doped GaAs
4. Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit
5. Electronic transport in periodically δ‐doped GaAs layers
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1. Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*;Chinese Physics B;2019-12-01
2. Electron transport in Al Ga1−As δ-MIGFETs: Conductivity enhancement induced by magnetic field effects;Superlattices and Microstructures;2016-12
3. Effect of Si δ-Doping on the Linear and Nonlinear Optical Absorptions and Refractive Index Changes in InAlN/GaN Single Quantum Wells;Chinese Physics Letters;2016-02
4. Impurity-related nonlinear optical properties in delta-doped quantum rings: Electric field effects;Physica B: Condensed Matter;2014-11
5. Linear and nonlinear intersubband optical absorption coefficient and refractive index change in n-type δ-doped GaAs structure;Optics Communications;2013-05
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