Growth of β -Ga 2 O 3 Films on Sapphire by Hydride Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/5/058101/pdf
Reference25 articles.
1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
2. Ga2O3Thin Film Growth onc-Plane Sapphire Substrates by Molecular Beam Epitaxy for Deep-Ultraviolet Photodetectors
3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
4. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V
5. Development of gallium oxide power devices
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1. Surface reconstructions on bare and hydrogenated β−Ga2O3 surfaces: Implications for growth;Physical Review Materials;2023-06-29
2. Investigation of high-temperature performance of WO<sub>3</sub>/<b><i>β</i></b>-Ga<sub>2</sub>O<sub>3</sub> heterojunction deep-ultraviolet photodetectors;Acta Physica Sinica;2023
3. (3̄10)-Oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations;CrystEngComm;2023
4. Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga2O3 Layers;Crystals;2022-12-09
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