New Power Lateral Double Diffused Metal–Oxide–Semiconductor Transistor with a Folded Accumulation Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/24/5/060/pdf
Reference12 articles.
1. Optimization of the specific on-resistance of the COOLMOS/sup TM/
2. Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices
3. New thin-film power MOSFETs with a buried oxide double step structure
4. The accumulation-mode field-effect transistor: a new ultralow on-resistance MOSFET
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1. Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer;Acta Physica Sinica;2017
2. New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage;Chinese Physics B;2015-02-26
3. New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer;Acta Physica Sinica;2015
4. New REBULF super junction LDMOS with the N type buffered layer;Acta Physica Sinica;2014
5. New super junction lateral double-diffused MOSFET with electric field modulation by differently doping the buffered layer;Acta Physica Sinica;2014
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