Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/31/8/088103/pdf
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1. Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective
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1. Electrochemical etching of n-type GaN in different electrolytes;Journal of Alloys and Compounds;2024-05
2. Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror;Vacuum;2020-12
3. Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers;Journal of Alloys and Compounds;2019-06
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