FTIR Characterization of Fluorine Doped Silicon Dioxide Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/17/12/020/pdf
Reference12 articles.
1. High quality fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C
2. Particle-Packing Phenomena and Their Application in Materials Processing
3. Preparation of low dielectric constant F‐doped SiO2 films by plasma enhanced chemical vapor deposition
4. Low Dielectric Constant Fluorinated Oxide Films Prepared by Remote Plasma Chemical Vapor Deposition
5. The Effect of Hydrogen Addition on the Fluorine Doping Level of SiOF Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition Using SiF4-Based Plasmas
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