High Intensity Single-Mode Peak Observed in the Lasing Spectrum of InAs/GaAs Quantum Dot Laser
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/2/024209/pdf
Reference14 articles.
1. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
2. 1.3 μm room-temperature GaAs-based quantum-dot laser
3. High-speed 1.3μm tunnel injection quantum-dot lasers
4. Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy
5. Quantum dot lasers: From promise to high-performance devices
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1. Studies of InAs/GaAs quantum dot laser grown by gas source molecular beam epitaxy;Optical and Quantum Electronics;2016-01-22
2. Thermal Analysis of Implant-Defined Vertical Cavity Surface Emitting Laser Array;Chinese Physics Letters;2015-01
3. Fabrication of narrow-striped InAs/GaAs quantum dot laser with wet etching technique;Journal of Modern Optics;2013-07
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