Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/28/7/070701/pdf
Reference14 articles.
1. Enhanced Radiation Effects on Submicron Narrow-Channel NMOS
2. Gate‐width dependence of radiation‐induced interface traps in metal/SiO2/Si devices
3. Gate size dependence of the radiation-produced changes in threshold voltage, mobility, and interface state density in bulk CMOS
4. Modeling of Ionizing Radiation Effects in Short-Channel MOSFETs
5. Effects of device scaling and geometry on MOS radiation hardness assurance
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1. Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs;Chinese Physics Letters;2018-04
2. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor;Acta Physica Sinica;2014
3. Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions;Chinese Physics B;2013-09
4. The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology;Chinese Physics Letters;2013-08
5. The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET;Acta Physica Sinica;2012
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