High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source/Drain on Thin Film SOI Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference13 articles.
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2. Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors
3. Analysis of Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistor on Silicon-on-Insulator Substrate and Demonstration of Sub-50-nm n-type Devices with Metal Gate
4. Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A physics-based threshold voltage model for hetero-dielectric dual material gate Schottky barrier MOSFET;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2018-01-17
2. Experimental I – V and C – V Analysis of Schottky-Barrier Metal-Oxide-Semiconductor Field Effect Transistors with Epitaxial NiSi 2 Contacts and Dopant Segregation;Chinese Physics Letters;2017-07
3. Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors;Chinese Physics Letters;2014-09
4. Design of a 1200-V Thin-Silicon-Layer p-Channel SOI LDMOS Device;Chinese Physics Letters;2011-12
5. Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction;Solid-State Electronics;2006-07
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