Investigation of nitrogen content influence on electron spin resonance in a-Si:H/a-SiN x :H mulatlatyers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/7/2/009/pdf
Reference11 articles.
1. Electroabsorption measurements of interfaces ina-Si:H/a-SiOx:H anda-Si:H/a-SiNx:H multilayer films
2. Properties of Hydrogenated Amorphous Si-N Prepared by Various Methods
3. Amorphous SiN:H dielectrics with low density of defects
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1. Hybrid channel induced forming-free performance in nanocrystalline-Si:H/a-SiNx:H resistive switching memory;Nanotechnology;2019-06-17
2. Defect termination on crystalline silicon surfaces by hydrogen for improvement in the passivation quality of catalytic chemical vapor-deposited SiNxand SiNx/P catalytic-doped layers;Japanese Journal of Applied Physics;2016-01-22
3. Passivation quality of a stoichiometric SiNxsingle passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing;Japanese Journal of Applied Physics;2014-01-22
4. Role of Poly(diallyldimethylammonium chloride) in Selective Polishing of Polysilicon over Silicon Dioxide and Silicon Nitride Films;Langmuir;2011-02-28
5. effect of nitrogen content in a-Si:H/a-SiNx:H multilayers on conductive mechanism;Chinese Physics Letters;1990-11
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