Passivation quality of a stoichiometric SiNxsingle passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing-Reference-Cited by-同舟云学术

Passivation quality of a stoichiometric SiNxsingle passivation layer on crystalline silicon prepared by catalytic chemical vapor deposition and successive annealing

Published:2014-01-22 Issue:2 Volume:53 Page:022301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Thi Trinh Cham,Koyama Koichi,Ohdaira Keisuke,Matsumura Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. Study on catalytic chemical vapor deposition method to prepare hydrogenated amorphous silicon

2. Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

3. Passivation characteristics of SiNx/a-Si and SiNx/Si-rich-SiNx stacked layers on crystalline silicon

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