Fabrication and Characterization of a GaN-Based 320 × 256 Micro-LED Array *

Author:

Mo Xiao-Fan,Xu Wei-Zong,Lu Hai,Zhou Dong,Ren Fang-Fang,Chen Dun-Jun,Zhang Rong,Zheng You-Dou

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Mechanical Properties of Flip-Chip Bonding Structures for Micro-Led Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding;2023 China Semiconductor Technology International Conference (CSTIC);2023-06-26

2. 3200 ppi Matrix-Addressable Blue MicroLED Display;Micromachines;2022-08-19

3. Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes;Optics Express;2022-07-12

4. Simulation study on thermal mechanical properties of 4×4 Micro-LED array in flip-chip bonding process;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

5. The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro‐light‐emitting diodes;Journal of the Society for Information Display;2021-06-28

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