Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference22 articles.
1. GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si(111) by Hydride Vapour Phase Epitaxy
2. Preparation and Properties of GaN Films on GaAs Substrates
3. Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
5. High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective;Nanoscale Advances;2021
2. Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate;Energy & Environmental Science;2011
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