Preparation and Properties of GaN Films on GaAs Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference27 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Growth and mosaic model of GaN grown directly on 6H–SiC(0001) by direct current plasma assisted molecular beam epitaxy
3. Growth and Optical Properties of Double Heterostructure GaN/InGaN/GaN Films with Large Composition
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. Dynamics of Below-Band-Gap Carrier in Highly Excited GaN
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1. Behavior of Etching Process on Formation of Porous Polycrystalline GaN Layer through Electroless Etching;ECS Journal of Solid State Science and Technology;2016
2. Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD;Journal of Materials Science;2009-12-29
3. Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates;Vacuum;2009-07
4. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching;Chinese Physics Letters;2006-07-21
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