Anticrossing Gap between Pairs of the Subbands in Al x Ga 1− x N/GaN Double Quantum Wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference10 articles.
1. Gain Spectrum in an Asymmetric Double Quantum Well
2. An improved band-anticrossing model – including the positional dependence of nitrogen – for InGaNAs∕GaAs quantum well lasers
3. Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells
4. Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells
5. Theoretical Analysis of Characteristics of Ga x In 1- x N y As 1- y /GaAs Quantum Well Lasers with Different Intermediate Layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Width of Left Well on Intersubband Transitions in Al x Ga 1−x N/GaN Double Quantum Wells;Chinese Physics Letters;2008-09
2. Linear and Nonlinear Intersubband Optical Absorptions and Refractive Index Changes in InGaN Strained Single Quantum Wells: Strong Built-in Electric Field Effects;Chinese Physics Letters;2007-07-26
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