Determination of Al Composition in Strained AlGaN Layers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference14 articles.
1. Growth and applications of Group III-nitrides
2. GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors
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1. Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors;physica status solidi (RRL) – Rapid Research Letters;2022-06-28
2. Response to “Comment on ‘Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system’” [Appl. Phys. Lett. 106, 176101 (2015)];Applied Physics Letters;2015-04-27
3. Measuring the composition of AlGaN layers in GaN based structures grown on 150 mm Si substrates using (2 0 5) reciprocal space maps;Semiconductor Science and Technology;2013-08-21
4. Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2010-11
5. Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si (111) Studied by RBS/Channelling and HRXRD;Chinese Physics Letters;2007-02-19
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