Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier-Reference-Cited by-同舟云学术

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Fabrication of GaN-Based Heterostructures with an InAlGaN/AlGaN Composite Barrier

Published:2016-08 Issue:8 Volume:33 Page:088102
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Quan Ru-Dai,Zhang Jin-Cheng,Xue Jun-Shuai,Zhao Yi,Ning Jing,Lin Zhi-Yu,Zhang Ya-Chao,Ren Ze-Yang,Hao Yue

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/33/8/088102/pdf

Reference24 articles.

1. GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

2. 220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

3. Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study on Analog & RF Performance of an Underlapped DG InAlGaN/GaN based MOS-HEMT between GaN layer width and InAlGaN layer width variation;2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA);2023-09-29

2. Negative differential resistance characteristics of GaN-based resonant tunneling diodes with quaternary AlInGaN as barrier;Semiconductor Science and Technology;2020-11-27

3. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor;Acta Physica Sinica;2019

4. Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier;IEEE Journal of the Electron Devices Society;2018

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