Performance Improvement of GaN-Based Violet Laser Diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/34/1/017101/pdf
Reference17 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. High Performance Solar-Blind Ultraviolet \(320 \times 256\) Focal Plane Arrays Based on AlxGa1-xN
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