Total Ionization Dose Effects on Charge Storage Capability of Al 2 O 3 /HfO 2 /Al 2 O 3 -Based Charge Trapping Memory Cell
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/11/118501/pdf
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1. The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study;Journal of Electronic Materials;2024-04-18
2. The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure;Journal of Materials Science: Materials in Electronics;2023-06
3. Electronic Total Ionizing Dose Test Calibration Method and Analysis of Radiation Damage Mechanism;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24
4. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor;Acta Physica Sinica;2022
5. Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS;Journal of Materials Science: Materials in Electronics;2019-05-08
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