Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference8 articles.
1. Material Science and the Electronic Packaging Roadmap
2. Characterization of porous silicate for ultra-low k dielectric application
3. Amorphous carbon based materials as the interconnect dielectric in ULSI chips
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1. Seamless Fabrication and Threshold Engineering in Monolayer MoS 2 Dual‐Gated Transistors via Hydrogen Silsesquioxane;Advanced Electronic Materials;2019-02-13
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3. Synthesis and structure characterization of low dielectric constant MSQ films by using octamethyl cyclotetrasiloxane (D4) as a porosity promotion agent;Vacuum;2013-10
4. Preparation of Ultra Low-κ Porous SiOCH Films from Ring-Type Siloxane with Unsaturated Hydrocarbon Side Chains by Spin-On Deposition;Chinese Physics Letters;2010-02
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