Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/7/078502/pdf
Reference23 articles.
1. On the go with SONOS
2. TID Radiation Response of 3-D Vertical GAA SONOS Memory Cells
3. Total Ionization Dose Effects on Charge-Trapping Memory With Al2O3/HfO2/Al2O3Trilayer Structure
4. Memory Effect of Metal—Insulator—Silicon Capacitors with SiO 2 /HfO 2 /Al 2 O 3 Dielectrics
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2. The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure;Journal of Materials Science: Materials in Electronics;2023-06
3. Ionizing Radiation Effects in SONOS-Based Neuromorphic Inference Accelerators;IEEE Transactions on Nuclear Science;2021-05
4. Total Ionizing Dose Responses of 22-nm FDSOI and 14-nm Bulk FinFET Charge-Trap Transistors;IEEE Transactions on Nuclear Science;2021-05
5. Numerical simulation of vertical tunnelling field-effect transistors charge-trapping memory with TCAD tools;Semiconductor Science and Technology;2021-03-04
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