Predicting the Potential Performance in P-Type SnS Crystals via Utilizing the Weighted Mobility and Quality Factor

Abstract

The figure of merit ZT is the direct embodiment of thermoelectric performance for a given material. However, as an indicator of performance improvement, the only ZT value is not good enough to identify its outstanding inherent properties, which are highly sought in thermoelectric community. Here, we utilize one powerful parameter to reveal the outstanding properties of a given material. The weighted mobility is used to estimate the carrier transports of p-type SnS crystals, including the differences in doping level, carrier scattering and electronic band structure. We analyze the difference in carrier scattering mechanism for different crystal forms with the same doping level, then evaluate and confirm the temperature-dependent evolution of electronic band structures in SnS. Finally, we calculate the quality factor B based on the weighted mobility, and establish the relationship between ZT and B to further predict the potential performance in p-type SnS crystals with low cost and earth abundance, which can be realized through taking advantage of the inherent material property, thus improving B factor to achieve optimal thermoelectric level.