Author:
Zheng Cheng,Zhao Dapeng,Cai Xinqiang,Huang Wantong,Meng Fanqi,Zhang Qinghua,Tang Lin,Hu Xiaopeng,Gu Lin,Ji Shuai-Hua,Chen Xi
Abstract
Layered material indium selenide (In
x
Se
y
) is a promising candidate for building next-generation electronic and photonic devices. We report a zirconium aided MBE growth of this van der Waals material. When co-depositing zirconium and selenium onto an indium phosphide substrate with a substrate temperature of 400°C at a constant zirconium flux rate of 0.01 ML/min, the polymorphic In
x
Se
y
layer emerges on top of the insulating ZrSe2 layer. Different archetypes, such as InSe, α-In2Se3 and β-In2Se3, are found in the In
x
Se
y
layers. A negative magnetoresistance of 40% at 2K under 9T magnetic field is observed. Such an In
x
Se
y
/ZrSe2 heterostructure with good lattice-matching may serve as a candidate for device applications.
Subject
General Physics and Astronomy
Cited by
2 articles.
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