Atomic Force Microscopy on the Ga 0.16 In 0.84 As 0.80 Sb 0.20 Epilayer Grown by Metalorganic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/15/10/009/pdf
Reference10 articles.
1. Prediction of loss minima in infra-red optical fibres
2. Mid‐wave infrared diode lasers based on GaInSb/InAs and InAs/AlSb superlattices
3. Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001)
4. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length
5. Self-Organization in Growth of Quantum Dot Superlattices
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1. Light Scattering Microscopy of Surface and Its Computational Simulation;Chinese Physics Letters;1999-06-01
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