Preparation and Characterization of BPO Film as Electrode for Using of FeRAM
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/7/100/pdf
Reference19 articles.
1. A New Silicon-Based Ferroelectric Sandwich Structure
2. A Silicon-Based Ferroelectric Capacitor for Memory Devices
3. PZT Thin Film Preparation on Pt-Ti Electrode by RF Sputtering
4. Crystal and Electrical Characterizations of Oriented Yttria-Stabilized Zirconia Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistor
5. Top-interface-controlled fatigue of epitaxial Pb(Zr0.52Ti0.48)O3 ferroelectric thin films on La0.7Sr0.3MnO3 electrodes
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1. Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field;Chinese Physics B;2022-07-01
2. Structural and electrical properties of pulsed laser deposited BaPbO3 conductive thin films and its effect on the ferroelectric properties of PbZr0.52Ti0.48O3 /BaPbO3 heterostructures;Ferroelectrics;2017-04-04
3. Annealing effects on the structural and electrical properties of pulsed laser deposited BaPbO3 thin films;AIP Conference Proceedings;2014
4. Stress analysis and ferroelectric properties of Pb(Zr0.52Ti0.48)0.96Nb0.04O3 thin film grown on different thickness of BaPbO3 electrodes;Journal of Applied Physics;2010-12
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