A New Resonant Tunnelling Structure of Integrated InGaAs/GaAs Very-Long-Wavelength Quantum-Well Infrared Photodetector

Author:

Da-Yuan Xiong,Ning Li,Wen-Lan Xu,Fei Yin,Wei Lu

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Quantum well infrared photo-detector IV characteristics;Sixth Conference on Frontiers in Optical Imaging and Technology: Novel Detector Technologies;2024-04-30

2. Molecular beam epitaxy growth of peak wavelength-controlled InGaAs/AlGaAs quantum wells for 4.3-μm mid-wavelength infrared detection;Nanoscale Research Letters;2013-07-03

3. Analysis and comparison of n-AlxGa1−xAs/GaAs QWIPs with different device structures and optical coupling;Infrared Physics & Technology;2009-11

4. Development of an infrared detector: Quantum well infrared photodetector;Science in China Series G: Physics, Mechanics and Astronomy;2009-06-02

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