Photoluminescence Analysis of Injection-Enhanced Annealing of Electron Irradiation-Induced Defects in GaAs Middle Cells for Triple-Junction Solar Cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/33/5/056102/pdf
Reference16 articles.
1. Multi-junction III–V solar cells: current status and future potential
2. Radiation-resistant solar cells for space use
3. Prediction of solar cell degradation in space from the electron–proton equivalence
4. Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n${}^{+}$–p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells;Chinese Physics Letters;2017-07
2. Non-ionizing energy loss calculations for modeling electron-induced degradation of Cu(In, Ga)Se 2 thin-film solar cells;Chinese Physics B;2016-08-30
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