Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells-Reference-Cited by-同舟云学术

Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

Published:2014-09 Issue: Volume:335 Page:66-69
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yi Tiancheng,Lu Ming,Yang Kui,Xiao Pengfei,Wang Rong

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

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4. Analysis of multijunction solar cells electroluminescence study;Makham;M. J. Condensed Matter,2004

5. Effects of 0.28–2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use;Rong;Nucl. Instrum. Meth. B,2008

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4. Measurement of the limiting subcell in multijunction space solar devices by restricted-wavelength-range illumination;Progress in Photovoltaics: Research and Applications;2018-06-19

5. Performance degradation of InGaP solar cells due to 70 keV electron irradiation;Japanese Journal of Applied Physics;2017-07-25