1. A static induction device manufactured by silicon direct bonding
2. Dongqing, H., Siyuan, L. and Yongshun, W. (2005), “Analysis on characteristic of static induction transistor using mirror method”, Chinese Journal of Semiconductors, Vol. 26 No. 2, pp. 258‐65.
3. Onose, H., Yatsuo, T., Watanabe, A., Yokota, T., Ishikawa, T., Sanpei, I., Someya, T. and Kobayashi, Y. (2001), “Design consideration for 2kV SiC‐SIT”, Proceedings 2001 International Symposium on Semiconductor Devices and Ics, Osaka, pp. 179‐82.
4. A review of SiC static induction transistor development for high-frequency power amplifiers
5. A novel buried-gate static induction transistor with diffused source region